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| Transistors with built-in Resistor UNR5211/5212/5213/5214/5215/5216/5217/5218/5219/5210/ 521D/521E/521F/521K/521L/521M/521N/521T/521V/521Z (UN5211/5212/5213/5214/5215/5216/5217/5218/5219/5210/521D/521E/ 521F/521K/521L/521M/521N/521T/521V/521Z) Unit: mm Silicon NPN epitaxial planer transistor 0.425 2.10.1 1.250.1 0.425 0.65 1 2.00.2 I Features G G 1.30.1 0.65 3 0.90.1 0 to 0.1 I Resistance by Part Number G G G G G G G G G G G G G G G G G G G G 0.70.1 0.20.1 Marking Symbol (R1) UNR5211 8A 10k UNR5212 8B 22k UNR5213 8C 47k UNR5214 8D 10k UNR5215 8E 10k UNR5216 8F 4.7k UNR5217 8H 22k UNR5218 8I 0.51k UNR5219 8K 1k UNR5210 8L 47k UNR521D 8M 47k UNR521E 8N 47k UNR521F 8O 4.7k UNR521K 8P 10k UNR521L 8Q 4.7k UNR521M EL 2.2k UNR521N EX 4.7k UNR521T EZ 22k UNR521V FD 2.2k UNR521Z FF 4.7k (R2) 10k 22k 47k 47k -- -- -- 5.1k 10k -- 10k 22k 10k 4.7k 4.7k 47k 47k 47k 2.2k 22k 1 : Base 2 : Emitter 3 : Collector EIAJ : SC-70 S-Mini Type Package Internal Connection R1 C B R2 E I Absolute Maximum Ratings Parameter Collector to base voltage Collector to emitter voltage Collector current Total power dissipation Junction temperature Storage temperature Symbol VCBO VCEO IC PT Tj Tstg (Ta=25C) Ratings 50 50 100 150 150 -55 to +150 Unit V V mA mW C C Note.) The Part numbers in the Parenthesis show conventional part number. 0.15 -0.05 +0.1 Costs can be reduced through downsizing of the equipment and reduction of the number of parts. S-Mini type package, allowing automatic insertion through tape packing and magazine packing. 2 0.2 0.3 -0 For digital circuits +0.1 1 UNR5211/5212/5213/5214/5215/5216/5217/5218/5219/5210/ Transistors with built-in Resistor 521D/521E/521F/521K/521L/521M/521N/521T/521V/521Z I Electrical Characteristics Parameter Collector cutoff current UNR5211 UNR5212/5214/521E/521D/521M/521N/521T UNR5213 Emitter cutoff current UNR5215/5216/5217/5210 UNR521F/521K UNR5219 UNR5218/521L/521V UNR521Z Collector to base voltage Collector to emitter voltage UNR5211 UNR5212/521E UNR5213/5214/521M Forward current transfer ratio UNR5215*/5216*/5217*/5210* UNR521F/521D/5219 UNR5218/521K/521L UNR521N/521T UNR521V UNR521Z Collector to emitter saturation voltage UNR521V Output voltage high level Output voltage low level UNR5213/521K UNR521D UNR521E Transition frequency UNR5211/5214/5215/521K UNR5212/5217/521T Input resistance UNR5213/521D/521E/5210 UNR5216/521F/521L/521N/521Z UNR5218 UNR5219 UNR521M/521V (Ta=25C) Symbol ICBO ICEO Conditions VCB = 50V, IE = 0 VCE = 50V, IB = 0 min typ max 0.1 0.5 0.5 0.2 0.1 IEBO VEB = 6V, IC = 0 0.01 1.0 1.5 2.0 0.4 VCBO VCEO IC = 10A, IE = 0 IC = 2mA, IB = 0 50 50 35 60 80 160 hFE VCE = 10V, IC = 5mA 30 20 80 6 60 VCE(sat) VOH IC = 10mA, IB = 0.3mA IC = 10mA, IB = 1.5mA VCC = 5V, VB = 0.5V, RL = 1k VCC = 5V, VB = 2.5V, RL = 1k VOL VOC = 5V, VB = 3.5V, RL = 1k VCC = 5V, VB = 10V, RL = 1k VCC = 5V, VB = 6V, RL = 1k fT VCB = 10V, IE = -2mA, f = 200MHz 150 10 22 47 R1 (-30%) 4.7 0.51 1 2.2 (+30%) k 4.9 0.2 0.2 0.2 0.2 MHz V 400 20 200 0.25 0.25 V V V 460 V V mA Unit A A * hFE rank classification (UNR5125/5216/5217/5210) Rank hFE Q 160 to 260 R 210 to 340 S 290 to 460 2 UNR5211/5212/5213/5214/5215/5216/5217/5218/5219/5210/ Transistors with built-in Resistor 521D/521E/521F/521K/521L/521M/521N/521T/521V/521Z I Electrical Characteristics (continued) Parameter UNR5211/5212/5213/521L UNR5214 UNR5218/5219 UNR521D Resistance ratio UNR521E UNR521F/521T UNR521K UNR521M UNR521N UNR521V UNR521Z R1/R2 Symbol (Ta=25C) Conditions min 0.8 0.17 0.08 typ 1.0 0.21 0.1 4.7 2.14 0.47 2.13 0.047 0.1 1.0 0.21 max 1.2 0.25 0.12 Unit 3 UNR5211/5212/5213/5214/5215/5216/5217/5218/5219/5210/ Transistors with built-in Resistor 521D/521E/521F/521K/521L/521M/521N/521T/521V/521Z Common characteristics chart PT -- Ta 240 Total power dissipation PT (mW) 200 160 120 80 40 0 0 40 80 120 160 Ambient temperature Ta (C) Characteristics charts of UNR5211 IC -- VCE 160 100 VCE(sat) -- IC Collector to emitter saturation voltage VCE(sat) (V) Ta=25C IC/IB=10 400 hFE -- IC VCE=10V 30 10 3 1 0.3 0.1 -25C 0.03 0.01 0.1 120 100 80 60 0.7mA 0.6mA 0.5mA 0.4mA 0.3mA Forward current transfer ratio hFE 140 IB=1.0mA 0.9mA 0.8mA Collector current IC (mA) 300 Ta=75C 200 25C 100 -25C 0.2mA 40 20 0 0 2 4 6 8 10 12 25C Ta=75C 0.1mA 0 0.3 1 3 10 30 100 1 3 10 30 100 300 1000 Collector to emitter voltage VCE (V) Collector current IC (mA) Collector current IC (mA) Cob -- VCB 6 IO -- VIN f=1MHz IE=0 Ta=25C 10000 3000 VO=5V Ta=25C 100 30 VIN -- IO VO=0.2V Ta=25C Collector output capacitance Cob (pF) 5 Output current IO (A) 4 300 100 30 10 3 Input voltage VIN (V) 0.6 0.8 1.0 1.2 1.4 1000 10 3 1 0.3 0.1 0.03 0.01 0.1 3 2 1 0 0.1 0.3 1 3 10 30 100 1 0.4 0.3 1 3 10 30 100 Collector to base voltage VCB (V) Input voltage VIN (V) Output current IO (mA) 4 UNR5211/5212/5213/5214/5215/5216/5217/5218/5219/5210/ Transistors with built-in Resistor 521D/521E/521F/521K/521L/521M/521N/521T/521V/521Z Characteristics charts of UNR5212 IC -- VCE 160 VCE(sat) -- IC 100 hFE -- IC IC/IB=10 400 VCE=10V Ta=25C 140 IB=1.0mA 0.9mA 0.8mA Collector to emitter saturation voltage VCE(sat) (V) 30 10 3 1 0.3 0.1 -25C 0.03 0.01 0.1 120 100 80 0.7mA 0.6mA 0.5mA 0.4mA Forward current transfer ratio hFE Collector current IC (mA) 300 Ta=75C 200 25C -25C 0.3mA 60 40 20 0 0 2 4 6 8 10 12 0.2mA 25C Ta=75C 100 0.1mA 0 0.3 1 3 10 30 100 1 3 10 30 100 300 1000 Collector to emitter voltage VCE (V) Collector current IC (mA) Collector current IC (mA) Cob -- VCB 6 IO -- VIN f=1MHz IE=0 Ta=25C 10000 3000 VO=5V Ta=25C 100 30 VIN -- IO VO=0.2V Ta=25C Collector output capacitance Cob (pF) 5 Output current IO (A) 4 Input voltage VIN (V) 1000 300 100 30 10 3 10 3 1 0.3 0.1 0.03 0.01 0.1 3 2 1 0 0.1 0.3 1 3 10 30 100 1 0.4 0.6 0.8 1.0 1.2 1.4 0.3 1 3 10 30 100 Collector to base voltage VCB (V) Input voltage VIN (V) Output current IO (mA) Characteristics charts of UNR5213 IC -- VCE 160 100 VCE(sat) -- IC Collector to emitter saturation voltage VCE(sat) (V) IC/IB=10 400 Ta=25C hFE -- IC VCE=10V Collector current IC (mA) 120 100 80 0.9mA 0.8mA 0.7mA 0.6mA 0.5mA 0.4mA 0.3mA 30 10 3 1 0.3 25C 0.1 0.03 0.01 0.1 -25C Ta=75C Forward current transfer ratio hFE 140 IB=1.0mA 350 300 250 200 150 100 50 0 Ta=75C 25C -25C 60 40 20 0 0 2 4 6 8 10 12 0.2mA 0.1mA 0.3 1 3 10 30 100 1 3 10 30 100 300 1000 Collector to emitter voltage VCE (V) Collector current IC (mA) Collector current IC (mA) 5 UNR5211/5212/5213/5214/5215/5216/5217/5218/5219/5210/ Transistors with built-in Resistor 521D/521E/521F/521K/521L/521M/521N/521T/521V/521Z Cob -- VCB 6 IO -- VIN f=1MHz IE=0 Ta=25C 10000 3000 VO=5V Ta=25C 100 30 VIN -- IO VO=0.2V Ta=25C Collector output capacitance Cob (pF) 5 Output current IO (A) 4 Input voltage VIN (V) 1000 300 100 30 10 3 10 3 1 0.3 0.1 0.03 0.01 0.1 3 2 1 0 0.1 0.3 1 3 10 30 100 1 0.4 0.6 0.8 1.0 1.2 1.4 0.3 1 3 10 30 100 Collector to base voltage VCB (V) Input voltage VIN (V) Output current IO (mA) Characteristics charts of UNR5214 IC -- VCE 160 100 VCE(sat) -- IC Collector to emitter saturation voltage VCE(sat) (V) Ta=25C IC/IB=10 400 hFE -- IC VCE=10V 30 10 3 1 0.3 Ta=75C 0.1 0.03 0.01 0.1 25C IB=1.0mA Collector current IC (mA) 120 100 80 60 40 20 0 0 2 4 6 8 0.9mA 0.8mA 0.7mA 0.6mA 0.5mA 0.4mA 0.3mA Forward current transfer ratio hFE 140 350 300 250 200 25C 150 -25C 100 50 0 Ta=75C 0.2mA 0.1mA 10 12 -25C 0.3 1 3 10 30 100 1 3 10 30 100 300 1000 Collector to emitter voltage VCE (V) Collector current IC (mA) Collector current IC (mA) Cob -- VCB 6 10000 f=1MHz IE=0 Ta=25C 3000 IO -- VIN VO=5V Ta=25C 100 30 VIN -- IO VO=0.2V Ta=25C Collector output capacitance Cob (pF) 5 Output current IO (A) 4 Input voltage VIN (V) 1000 300 100 30 10 3 10 3 1 0.3 0.1 0.03 0.01 0.1 3 2 1 0 0.1 0.3 1 3 10 30 100 1 0.4 0.6 0.8 1.0 1.2 1.4 0.3 1 3 10 30 100 Collector to base voltage VCB (V) Input voltage VIN (V) Output current IO (mA) 6 UNR5211/5212/5213/5214/5215/5216/5217/5218/5219/5210/ Transistors with built-in Resistor 521D/521E/521F/521K/521L/521M/521N/521T/521V/521Z Characteristics charts of UNR5215 IC -- VCE 160 VCE(sat) -- IC 100 hFE -- IC IC/IB=10 400 VCE=10V 30 10 3 1 0.3 0.1 0.03 0.01 0.1 25C Forward current transfer ratio hFE 140 IB=1.0mA 0.9mA 0.8mA Ta=25C Collector to emitter saturation voltage VCE(sat) (V) 350 300 250 200 25C 150 100 50 0 -25C Ta=75C Collector current IC (mA) 120 100 80 0.7mA 0.6mA 0.5mA 0.4mA 0.3mA 60 0.2mA 40 20 0 0 2 4 6 8 10 12 0.1mA Ta=75C -25C 0.3 1 3 10 30 100 1 3 10 30 100 300 1000 Collector to emitter voltage VCE (V) Collector current IC (mA) Collector current IC (mA) Cob -- VCB 6 IO -- VIN f=1MHz IE=0 Ta=25C 10000 3000 VO=5V Ta=25C 100 30 VIN -- IO VO=0.2V Ta=25C Collector output capacitance Cob (pF) 5 Output current IO (A) 4 300 100 30 10 3 Input voltage VIN (V) 0.6 0.8 1.0 1.2 1.4 1000 10 3 1 0.3 0.1 0.03 0.01 0.1 3 2 1 0 0.1 0.3 1 3 10 30 100 1 0.4 0.3 1 3 10 30 100 Collector to base voltage VCB (V) Input voltage VIN (V) Output current IO (mA) Characteristics charts of UNR5216 IC -- VCE 160 VCE(sat) -- IC 100 hFE -- IC IC/IB=10 400 VCE=10V 350 Ta=75C 300 250 -25C 200 150 100 50 0 25C Ta=25C 140 IB=1.0mA Collector to emitter saturation voltage VCE(sat) (V) 30 10 3 1 0.3 Ta=75C 0.1 0.03 0.01 0.1 25C 120 100 0.9mA 0.8mA 0.7mA 0.6mA 0.5mA 80 60 40 20 0 0 2 4 6 8 0.4mA 0.3mA 0.2mA 0.1mA -25C 0.3 1 3 10 30 100 1 3 10 30 100 300 1000 10 12 Collector to emitter voltage VCE (V) Collector current IC (mA) Forward current transfer ratio hFE Collector current IC (mA) Collector current IC (mA) 7 UNR5211/5212/5213/5214/5215/5216/5217/5218/5219/5210/ Transistors with built-in Resistor 521D/521E/521F/521K/521L/521M/521N/521T/521V/521Z Cob -- VCB 6 IO -- VIN f=1MHz IE=0 Ta=25C 10000 3000 VO=5V Ta=25C VIN -- IO 100 30 VO=0.2V Ta=25C Collector output capacitance Cob (pF) 5 Output current IO (A) 4 Input voltage VIN (V) 1000 300 100 30 10 3 10 3 1 0.3 0.1 0.03 0.01 0.1 3 2 1 0 0.1 0.3 1 3 10 30 100 1 0.4 0.6 0.8 1.0 1.2 1.4 0.3 1 3 10 30 100 Collector to base voltage VCB (V) Input voltage VIN (V) Output current IO (mA) Characteristics charts of UNR5217 IC -- VCE 120 100 VCE(sat) -- IC Collector to emitter saturation voltage VCE(sat) (V) IC/IB=10 400 hFE -- IC VCE=10V 100 30 10 3 1 0.3 25C 0.1 0.03 0.01 0.1 Forward current transfer ratio hFE Collector current IC (mA) Ta=25C IB=1.0mA 0.9mA 0.8mA 0.7mA 0.6mA 0.5mA 350 300 250 200 Ta=75C 150 100 50 0 25C -25C 80 0.4mA 0.3mA 0.2mA 60 Ta=75C 40 20 0.1mA -25C 0.3 1 3 10 30 100 0 0 2 4 6 8 10 12 1 3 10 30 100 300 1000 Collector to emitter voltage VCE (V) Collector current IC (mA) Collector current IC (mA) Cob -- VCB 6 IO -- VIN f=1MHz IE=0 Ta=25C 10000 3000 VO=5V Ta=25C 100 30 VIN -- IO VO=0.2V Ta=25C Collector output capacitance Cob (pF) 5 Output current IO (A) 4 Input voltage VIN (V) 1000 300 100 30 10 3 10 3 1 0.3 0.1 0.03 0.01 0.1 3 2 1 0 0.1 0.3 1 3 10 30 100 1 0.4 0.6 0.8 1.0 1.2 1.4 0.3 1 3 10 30 100 Collector to base voltage VCB (V) Input voltage VIN (V) Output current IO (mA) 8 UNR5211/5212/5213/5214/5215/5216/5217/5218/5219/5210/ Transistors with built-in Resistor 521D/521E/521F/521K/521L/521M/521N/521T/521V/521Z Characteristics charts of UNR5218 IC -- VCE 240 100 VCE(sat) -- IC Collector to emitter saturation voltage VCE(sat) (V) Ta=25C IC/IB=10 160 hFE -- IC VCE=10V 200 30 10 3 1 Ta=75C 0.3 0.1 0.03 -25C 0.01 0.1 25C Forward current transfer ratio hFE Collector current IC (mA) 160 IB=1.0mA 0.9mA 0.8mA 0.7mA 120 Ta=75C 80 25C -25C 40 120 0.6mA 0.5mA 0.4mA 0.3mA 0.2mA 0 0 2 4 6 8 0.1mA 10 12 80 40 0 0.3 1 3 10 30 100 1 3 10 30 100 300 1000 Collector to emitter voltage VCE (V) Collector current IC (mA) Collector current IC (mA) Cob -- VCB 6 IO -- VIN f=1MHz IE=0 Ta=25C 10000 3000 VO=5V Ta=25C 100 30 VIN -- IO VO=0.2V Ta=25C Collector output capacitance Cob (pF) 5 Output current IO (A) 4 300 100 30 10 3 Input voltage VIN (V) 0.6 0.8 1.0 1.2 1.4 1000 10 3 1 0.3 0.1 0.03 0.01 0.1 3 2 1 0 0.1 0.3 1 3 10 30 100 1 0.4 0.3 1 3 10 30 100 Collector to base voltage VCB (V) Input voltage VIN (V) Output current IO (mA) Characteristics charts of UNR5219 IC -- VCE 240 100 VCE(sat) -- IC Collector to emitter saturation voltage VCE(sat) (V) Ta=25C IC/IB=10 hFE -- IC 160 VCE=10V 200 160 IB=1.0mA 0.9mA 0.8mA 0.7mA 0.6mA 10 3 1 Ta=75C 0.3 25C 0.1 0.03 -25C 0.01 0.1 0.3 1 3 10 30 100 Forward current transfer ratio hFE 30 Collector current IC (mA) 120 120 0.5mA 0.4mA 0.3mA 40 0.2mA 0.1mA 0 0 2 4 6 8 10 12 80 Ta=75C 25C -25C 80 40 0 1 3 10 30 100 300 1000 Collector to emitter voltage VCE (V) Collector current IC (mA) Collector current IC (mA) 9 UNR5211/5212/5213/5214/5215/5216/5217/5218/5219/5210/ Transistors with built-in Resistor 521D/521E/521F/521K/521L/521M/521N/521T/521V/521Z Cob -- VCB 6 IO -- VIN f=1MHz IE=0 Ta=25C 10000 3000 VO=5V Ta=25C 100 30 VIN -- IO VO=0.2V Ta=25C Collector output capacitance Cob (pF) 5 Output current IO (A) 4 300 100 30 10 3 Input voltage VIN (V) 0.6 0.8 1.0 1.2 1.4 1000 10 3 1 0.3 0.1 0.03 0.01 0.1 3 2 1 0 0.1 0.3 1 3 10 30 100 1 0.4 0.3 1 3 10 30 100 Collector to base voltage VCB (V) Input voltage VIN (V) Output current IO (mA) Characteristics charts of UNR5210 IC -- VCE 60 VCE(sat) -- IC 100 hFE -- IC IC/IB=10 400 VCE=10V Collector to emitter saturation voltage VCE(sat) (V) 50 30 10 3 1 Ta=75C 0.3 25C 0.1 0.03 0.01 0.1 -25C Forward current transfer ratio hFE IB=1.0mA 0.9mA 0.8mA Ta=25C 350 300 Ta=75C 250 25C 200 150 100 50 0 -25C Collector current IC (mA) 40 0.4mA 0.5mA 0.6mA 0.7mA 0.1mA 30 0.3mA 20 10 0 0 2 4 6 8 10 12 0.3 1 3 10 30 100 1 3 10 30 100 300 1000 Collector to emitter voltage VCE (V) Collector current IC (mA) Collector current IC (mA) Cob -- VCB 6 IO -- VIN f=1MHz IE=0 Ta=25C 10000 3000 VO=5V Ta=25C 100 30 VIN -- IO VO=0.2V Ta=25C Collector output capacitance Cob (pF) 5 Output current IO (A) 4 300 100 30 10 3 Input voltage VIN (V) 0.6 0.8 1.0 1.2 1.4 1000 10 3 1 0.3 0.1 0.03 0.01 0.1 3 2 1 0 0.1 0.3 1 3 10 30 100 1 0.4 0.3 1 3 10 30 100 Collector to base voltage VCB (V) Input voltage VIN (V) Output current IO (mA) 10 UNR5211/5212/5213/5214/5215/5216/5217/5218/5219/5210/ Transistors with built-in Resistor 521D/521E/521F/521K/521L/521M/521N/521T/521V/521Z Characteristics charts of UNR521D IC -- VCE 30 100 VCE(sat) -- IC Collector to emitter saturation voltage VCE(sat) (V) IC/IB=10 160 VCE=10V hFE -- IC Ta=75C 25C -25C 120 25 30 10 3 1 0.3 25C 0.1 0.03 0.01 0.1 -25C IB=1.0mA 20 15 0.2mA 10 0.1mA Forward current transfer ratio hFE 100 Collector current IC (mA) Ta=25C 0.9mA 0.8mA 0.5mA 0.7mA 0.4mA 0.6mA 0.3mA 80 Ta=75C 40 5 0 0 2 4 6 8 10 12 0 0.3 1 3 10 30 1 3 10 30 100 300 1000 Collector to emitter voltage VCE (V) Collector current IC (mA) Collector current IC (mA) Cob -- VCB 6 IO -- VIN f=1MHz IE=0 Ta=25C 10000 3000 VO=5V Ta=25C 100 30 VIN -- IO VO=0.2V Ta=25C Collector output capacitance Cob (pF) 5 Output current IO (A) 4 Input voltage VIN (V) 1000 300 100 30 10 3 10 3 1 0.3 0.1 0.03 0.01 0.1 3 2 1 0 0.1 0.3 1 3 10 30 100 1 1.5 2.0 2.5 3.0 3.5 4.0 0.3 1 3 10 30 100 Collector to base voltage VCB (V) Input voltage VIN (V) Output current IO (mA) Characteristics charts of UNR521E IC -- VCE 60 VCE(sat) -- IC 100 hFE -- IC IC/IB=10 160 VCE=10V Collector to emitter saturation voltage VCE(sat) (V) 50 30 10 3 1 Ta=75C 0.3 0.1 0.03 0.01 0.1 25C Forward current transfer ratio hFE IB=1.0mA 0.7mA Ta=25C 0.9mA 0.6mA 0.8mA Collector current IC (mA) 120 Ta=75C 25C -25C 40 0.3mA 0.4mA 0.5mA 0.2mA 30 80 0.1mA 20 40 10 -25C 0 0.3 1 3 10 30 100 1 3 10 30 100 300 1000 0 0 2 4 6 8 10 12 Collector to emitter voltage VCE (V) Collector current IC (mA) Collector current IC (mA) 11 UNR5211/5212/5213/5214/5215/5216/5217/5218/5219/5210/ Transistors with built-in Resistor 521D/521E/521F/521K/521L/521M/521N/521T/521V/521Z Cob -- VCB 6 IO -- VIN f=1MHz IE=0 Ta=25C 10000 3000 VO=5V Ta=25C 100 30 VIN -- IO VO=0.2V Ta=25C Collector output capacitance Cob (pF) 5 Output current IO (A) 4 Input voltage VIN (V) 1000 300 100 30 10 3 10 3 1 0.3 0.1 0.03 0.01 0.1 3 2 1 0 0.1 0.3 1 3 10 30 100 1 1.5 2.0 2.5 3.0 3.5 4.0 0.3 1 3 10 30 100 Collector to base voltage VCB (V) Input voltage VIN (V) Output current IO (mA) Characteristics charts of UNR521F IC -- VCE 240 100 VCE(sat) -- IC Collector to emitter saturation voltage VCE(sat) (V) Ta=25C IC/IB=10 160 hFE -- IC VCE=10V 200 30 10 3 1 0.3 25C 0.1 0.03 0.01 0.1 Ta=75C Forward current transfer ratio hFE Collector current IC (mA) 160 0.9mA 0.8mA 0.7mA 0.6mA 120 Ta=75C 80 25C -25C 120 IB=1.0mA 0.5mA 0.4mA 0.3mA 80 40 40 0.2mA 0.1mA 0 0 2 4 6 8 10 12 -25C 0 0.3 1 3 10 30 100 1 3 10 30 100 300 1000 Collector to emitter voltage VCE (V) Collector current IC (mA) Collector current IC (mA) Cob -- VCB 6 IO -- VIN f=1MHz IE=0 Ta=25C 10000 3000 VO=5V Ta=25C VIN -- IO 100 30 VO=0.2V Ta=25C Collector output capacitance Cob (pF) 5 Output current IO (A) 4 Input voltage VIN (V) 1000 300 100 30 10 3 10 3 1 0.3 0.1 0.03 0.01 0.1 3 2 1 0 0.1 0.3 1 3 10 30 100 1 0.4 0.6 0.8 1.0 1.2 1.4 0.3 1 3 10 30 100 Collector to base voltage VCB (V) Input voltage VIN (V) Output current IO (mA) 12 UNR5211/5212/5213/5214/5215/5216/5217/5218/5219/5210/ Transistors with built-in Resistor 521D/521E/521F/521K/521L/521M/521N/521T/521V/521Z Characteristics charts of UNR521K IC -- VCE 240 100 VCE(sat) -- IC Collector to emitter saturation voltage VCE(sat) (V) Ta=25C IC/IB=10 hFE -- IC 240 VCE=10V 200 Forward current transfer ratio hFE 200 Collector current IC (mA) 10 160 IB=1.2mA 1.0mA 0.8mA 80 0.6mA 0.4mA 0.2mA 0 0 2 4 6 8 10 12 160 Ta=75C 120 25C 80 -25C 40 120 1 25C 0.1 Ta=75C 40 -25C 0.01 1 3 10 30 100 300 1000 0 1 3 10 30 100 300 1000 Collector to emitter voltage VCE (V) Collector current IC (mA) Collector current IC (mA) Cob -- VCB 6 VIN -- IO f=1MHz IE=0 Ta=25C 100 30 VO=0.2V Ta=25C Collector output capacitance Cob (pF) 5 4 Input voltage VIN (V) 1 3 10 30 100 10 3 1 0.3 0.1 0.03 3 2 1 0 0.01 0.1 0.3 1 3 10 30 100 Collector to base voltage VCB (V) Output current IO (mA) Characteristics charts of UNR521L IC -- VCE 240 100 VCE(sat) -- IC Collector to emitter saturation voltage VCE(sat) (V) Ta=25C IC/IB=10 240 hFE -- IC VCE=10V 200 Forward current transfer ratio hFE 200 Collector current IC (mA) 10 160 IB=1.0mA 120 0.8mA 0.6mA 80 0.4mA 160 Ta=75C 1 120 25C Ta=75C 25C 0.1 -25C -25C 80 40 0.2mA 0 0 2 4 6 8 10 12 40 0.01 1 3 10 30 100 300 1000 0 1 3 10 30 100 300 1000 Collector to emitter voltage VCE (V) Collector current IC (mA) Collector current IC (mA) 13 UNR5211/5212/5213/5214/5215/5216/5217/5218/5219/5210/ Transistors with built-in Resistor 521D/521E/521F/521K/521L/521M/521N/521T/521V/521Z Cob -- VCB 6 100 f=1MHz IE=0 Ta=25C IO -- VIN VO=0.2V Ta=25C Collector output capacitance Cob (pF) 5 4 Input voltage VIN (V) 10 3 1 2 0.1 1 0 1 3 10 30 100 0.01 0.1 0.3 1 3 10 30 100 Collector to base voltage VCB (V) Output current IO (mA) Characteristics charts of UNR521M IC -- VCE 240 VCE(sat) -- IC 10 hFE -- IC IC/IB=10 500 VCE=10V Collector to emitter saturation voltage VCE(sat) (V) Ta=25C 200 IB=1.0mA 0.9mA 0.8mA 0.7mA 3 1 0.3 Ta=75C 0.1 0.03 0.01 0.003 0.001 25C Forward current transfer ratio hFE Collector current IC (mA) 400 160 0.6mA 0.5mA 0.4mA 0.3mA 0.2mA 300 Ta=75C 25C 200 -25C 120 80 -25C 40 0.1mA 100 0 0 2 4 6 8 10 12 0 1 3 10 30 100 300 1000 1 3 10 30 100 300 1000 Collector to emitter voltage VCE (V) Collector current IC (mA) Collector current IC (mA) Cob -- VCB 5 104 IO -- VIN f=1MHz IE=0 Ta=25C VO=5V Ta=25C VIN -- IO 100 30 VO=0.2V Ta=25C Collector output capacitance Cob (pF) 4 Output current IO (A) Input voltage VIN (V) 103 10 3 1 0.3 0.1 0.03 3 102 2 101 1 0 0.1 0.3 1 3 10 30 100 1 0.4 0.6 0.8 1.0 1.2 1.4 0.01 0.1 0.3 1 3 10 30 100 Collector to base voltage VCB (V) Input voltage VIN (V) Output current IO (mA) 14 UNR5211/5212/5213/5214/5215/5216/5217/5218/5219/5210/ Transistors with built-in Resistor 521D/521E/521F/521K/521L/521M/521N/521T/521V/521Z Characteristics charts of UNR521N IC -- VCE 160 Ta=25C 140 IB=1.0mA 0.9mA 0.8mA 0.7mA 0.6mA 0.5mA 0.4mA 0.3mA 0.2mA 10 VCE(sat) -- IC Collector to emitter saturation voltage VCE(sat) (V) IC/IB=10 480 hFE -- IC VCE=10V Forward current transfer ratio hFE 400 Ta=75C Collector current IC (mA) 120 100 80 60 40 1 320 25C 240 0.1 25C Ta=75C 160 -25C 0.1mA 20 0 0 2 4 6 8 10 12 80 -25C 0.01 1 10 100 1000 0 1 10 100 1000 Collector to emitter voltage VCE (V) Collector current IC (mA) Collector current IC (mA) Cob -- VCB 6 IO -- VIN f=1MHz IE=0 Ta=25C 10000 VO=5V Ta=25C 100 VIN -- IO VO=0.2V Ta=25C Collector output capacitance Cob (pF) 5 Output current IO (A) 4 3 100 Input voltage VIN (V) 0.6 0.8 1 1.2 1.4 1000 10 1 2 10 0.1 1 0 1 10 100 1 0.4 0.01 0.1 1 10 100 Collector to base voltage VCB (V) Input voltage VIN (V) Output current IO (mA) Characteristics charts of UNR521T IC -- VCE 160 Ta=25C 140 IB=1.0mA 0.9mA 0.8mA 0.7mA 0.6mA 0.5mA 0.4mA 80 60 40 0.1mA 20 0 0 2 4 6 8 10 12 0.3mA 0.2mA VCE(sat) -- IC 10 hFE -- IC IC/IB=10 480 VCE=10V Collector to emitter saturation voltage VCE(sat) (V) Forward current transfer ratio hFE 400 Ta=75C 320 25C Collector current IC (mA) 120 100 1 240 0.1 25C Ta=75C -25C 160 80 -25C 0.01 1 10 100 1000 0 1 10 100 1000 Collector to emitter voltage VCE (V) Collector current IC (mA) Collector current IC (mA) 15 UNR5211/5212/5213/5214/5215/5216/5217/5218/5219/5210/ Transistors with built-in Resistor 521D/521E/521F/521K/521L/521M/521N/521T/521V/521Z Cob -- VCB 6 IO -- VIN f=1MHz IE=0 Ta=25C 10000 VO=5V Ta=25C 100 VIN -- IO VO=0.2V Ta=25C Collector output capacitance Cob (pF) 5 Output current IO (A) 4 3 Input voltage VIN (V) 1000 10 100 1 2 10 0.1 1 0 1 10 100 1 0.4 0.6 0.8 1 1.2 1.4 0.01 0.1 1 10 100 Collector to base voltage VCB (V) Input voltage VIN (V) Output current IO (mA) Characteristics charts of UNR521V IC -- VCE 160 Ta=25C 140 VCE(sat) -- IC 10 hFE -- IC IC/IB=10 240 VCE=10V Collector to emitter saturation voltage VCE(sat) (V) Forward current transfer ratio hFE 200 Collector current IC (mA) 120 100 80 60 40 IB=1.0mA 0.9mA 0.8mA 0.7mA 0.6mA 0.5mA 1 160 Ta=75C 120 25C 80 -25C Ta=75C 0.1 25C 0.4mA 20 0 0 2 4 6 8 0.3mA 0.2mA 10 12 -25C 40 0.01 1 10 100 1000 0 1 10 100 1000 Collector to emitter voltage VCE (V) Collector current IC (mA) Collector current IC (mA) Cob -- VCB 6 IO -- VIN f=1MHz IE=0 Ta=25C 10000 VO=5V Ta=25C 100 VIN -- IO VO=0.2V Ta=25C Collector output capacitance Cob (pF) 5 Output current IO (A) 4 Input voltage VIN (V) 1000 10 3 100 1 2 10 0.1 1 0 1 10 100 1 0.4 0.6 0.8 1 1.2 1.4 0.01 0.1 1 10 100 Collector to base voltage VCB (V) Input voltage VIN (V) Output current IO (mA) 16 UNR5211/5212/5213/5214/5215/5216/5217/5218/5219/5210/ Transistors with built-in Resistor 521D/521E/521F/521K/521L/521M/521N/521T/521V/521Z Characteristics charts of UNR521Z IC -- VCE 160 Ta=25C 140 IB=1.0mA 0.9mA 0.8mA 0.7mA 0.6mA 0.5mA 0.4mA 80 60 0.2mA 40 20 0 0 2 4 6 8 10 12 0.1mA 0.3mA VCE(sat) -- IC 10 hFE -- IC IC/IB=10 480 VCE=10V Collector to emitter saturation voltage VCE(sat) (V) Forward current transfer ratio hFE 400 Collector current IC (mA) 120 100 1 320 Ta=75C 240 25C -25C Ta=75C 0.1 25C 160 -25C 80 0.01 1 10 100 1000 0 1 10 100 1000 Collector to emitter voltage VCE (V) Collector current IC (mA) Collector current IC (mA) Cob -- VCB 6 IO -- VIN f=1MHz IE=0 Ta=25C 10000 VO=5V Ta=25C 100 VIN -- IO VO=0.2V Ta=25C Collector output capacitance Cob (pF) 5 Output current IO (A) 4 3 100 Input voltage VIN (V) 0.6 0.8 1 1.2 1.4 1000 10 1 2 10 0.1 1 0 -1 -10 -100 1 0.4 0.01 0.1 1 10 100 Collector to base voltage VCB (V) Input voltage VIN (V) Output current IO (mA) 17 Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technologies described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. (2) The technical information described in this material is limited to showing representative characteristics and applied circuit examples of the products. It does not constitute the warranting of industrial property, the granting of relative rights, or the granting of any license. (3) The products described in this material are intended to be used for standard applications or general electronic equipment (such as office equipment, communications equipment, measuring instruments and household appliances). Consult our sales staff in advance for information on the following applications: * Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment, combustion equipment, life support systems and safety devices) in which exceptional quality and reliability are required, or if the failure or malfunction of the products may directly jeopardize life or harm the human body. * Any applications other than the standard applications intended. (4) The products and product specifications described in this material are subject to change without notice for reasons of modification and/or improvement. At the final stage of your design, purchasing, or use of the products, therefore, ask for the most up-to-date Product Standards in advance to make sure that the latest specifications satisfy your requirements. (5) When designing your equipment, comply with the guaranteed values, in particular those of maximum rating, the range of operating power supply voltage and heat radiation characteristics. Otherwise, we will not be liable for any defect which may arise later in your equipment. Even when the products are used within the guaranteed values, redundant design is recommended, so that such equipment may not violate relevant laws or regulations because of the function of our products. (6) When using products for which dry packing is required, observe the conditions (including shelf life and after-unpacking standby time) agreed upon when specification sheets are individually exchanged. (7) No part of this material may be reprinted or reproduced by any means without written permission from our company. Please read the following notes before using the datasheets A. These materials are intended as a reference to assist customers with the selection of Panasonic semiconductor products best suited to their applications. Due to modification or other reasons, any information contained in this material, such as available product types, technical data, and so on, is subject to change without notice. Customers are advised to contact our semiconductor sales office and obtain the latest information before starting precise technical research and/or purchasing activities. B. Panasonic is endeavoring to continually improve the quality and reliability of these materials but there is always the possibility that further rectifications will be required in the future. Therefore, Panasonic will not assume any liability for any damages arising from any errors etc. that may appear in this material. C. These materials are solely intended for a customer's individual use. Therefore, without the prior written approval of Panasonic, any other use such as reproducing, selling, or distributing this material to a third party, via the Internet or in any other way, is prohibited. 2001 MAR |
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